Structural parameters of CVD synthesized Ga2O3 nanostructures from X-ray diffraction analysis derived by Scherrer, Williamson-Hall, Size-Strain Plot and Halder-Wagner methods-A comparative study

被引:3
作者
Lim, Jieh Sim [1 ]
Yam, Fong Kwong [1 ]
机构
[1] Univ Sains Malaysia USM, Sch Phys, George Town 11800, Malaysia
关键词
X-ray diffraction; Structural parameters; Williamson-Hall; Size-Strain Plot; Halder-Wagner models; GALLIUM OXIDE;
D O I
10.1016/j.physb.2024.416798
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Gallium oxide (Ga2O3) nanostructures (NSs) have been synthesized by hydrogen-reducing chemical vapor deposition method at various substrate angles. X-ray diffraction (XRD) study confirms the polycrystalline nature of the Ga2O3 NSs with monoclinic structure. Here, a series of X-ray peak profile analysis models such as Scherrer method, Monshi-Scherrer (M- S) plot, Williamson-Hall (W-H) plot, Size-Strain plot (S-S-P) and Halder-Wagner (H-W) technique have been utilized to estimate the crystallite size and lattice strain. All the models are evaluated with their merits and demerits in detail, and the structural parameters determined from different models are compared. Among the X-ray peak profile analysis methods, S-S-P method is the most suitable since the data points more accurately fit in this method with the highest average goodness of fit, R 2 value. It has also been suggested that the anisotropic strain could have increased and shifted to lower angles crystallographic reflections as the substrate angle was >= 67.5 degrees .
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页数:9
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共 25 条
  • [1] Estimation of lattice strain for zirconia nano-particles based on Williamson-Hall analysis
    Aly, Kamal A.
    Khalil, N. M.
    Algamal, Yousif
    Saleem, Qaid M. A.
    [J]. MATERIALS CHEMISTRY AND PHYSICS, 2017, 193 : 182 - 188
  • [2] Influence of temperature and nickel catalyst on the structural and optical properties of indium oxide nanostructured films synthesized by chemical vapor deposition technique
    Aper, T. M.
    Yam, F. K.
    Beh, K. P.
    [J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2021, 132
  • [3] Microstructural parameters from X-ray peak profile analysis by Williamson-Hall models; A review
    Bantikatla, Himabindu
    Devi, Latha N. S. M. P.
    Bhogoju, Rajini Kanth
    [J]. MATERIALS TODAY-PROCEEDINGS, 2021, 47 : 4891 - 4896
  • [4] β-gallium oxide as oxygen gas sensors at a high temperature
    Bartic, Marilena
    Baban, Cristian-Ioan
    Suzuki, Hisao
    Ogita, Masami
    Isai, Masaaki
    [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2007, 90 (09) : 2879 - 2884
  • [5] The use of X-ray diffraction peak profile analysis to determine the structural parameters of cobalt ferrite nanoparticles using Debye-Scherrer, Williamson-Hall, Halder-Wagner and Size-strain plot: Different precipitating agent approach
    Basak, Munmun
    Rahman, Md Lutfor
    Ahmed, Md Farid
    Biswas, Bristy
    Sharmin, Nahid
    [J]. JOURNAL OF ALLOYS AND COMPOUNDS, 2022, 895
  • [6] Ga2O3 Films for Photoelectrochemical Hydrogen Generation
    Chang, Shoou-Jinn
    Wu, Ya-Ling
    Weng, Wen-Yin
    Lin, Yo-Hong
    Hsieh, Wei-Kang
    Sheu, Jinn-Kong
    Hsu, Cheng-Liang
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2014, 161 (09) : H508 - H511
  • [7] X-ray analysis of nanoporous TiO2 synthesized by electrochemical anodization
    Cheong, Y. L.
    Yam, F. K.
    Chin, I. K.
    Hassan, Z.
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 2013, 64 : 37 - 43
  • [8] Recent progress in Ga2O3 power devices
    Higashiwaki, Masataka
    Sasaki, Kohei
    Murakami, Hisashi
    Kumagai, Yoshinao
    Koukitu, Akinori
    Kuramata, Akito
    Masui, Takekazu
    Yamakoshi, Shigenobu
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2016, 31 (03)
  • [9] Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
    Higashiwaki, Masataka
    Sasaki, Kohei
    Kuramata, Akito
    Masui, Takekazu
    Yamakoshi, Shigenobu
    [J]. APPLIED PHYSICS LETTERS, 2012, 100 (01)
  • [10] Hossain MS., 2024, Results in Mater (Basel), V21, P100496, DOI 10.1016/j.rinma.2023.100496