Rapid On-Wafer Quality Screening of AlGaN/GaN Superlattice Castellated Field Effect Transistors Using Short-Term Stress and Electroluminescence

被引：0

作者：

Parvez, Bazila ^{[1
]}

Kumar, Akhil S. ^{[1
]}

Pomeroy, James W. ^{[1
]}

Smith, Matthew D. ^{[1
]}

Howell, Robert S. ^{[2
]}

Kuball, Martin ^{[1
]}

机构：

[1] Univ Bristol, HH Wills Phys Lab, Ctr Device Thermog, Bristol BS8 1TL, Avon, England

[2] Northrop Grumman Mission Syst, Linthicum Heights, MD 21090 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2024年 / 45卷 / 12期

关键词：

Breakdown voltage (BV); electroluminescence (EL); hot electrons; step-stress; super-lattice castellated field effect transistors (SLCFETs); HEMTS; GHZ;

D O I：

10.1109/LED.2024.3478073

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A electroluminescence (EL) based methodology has been devised to screen AlGaN/GaN Super-Lattice Castellated Field Effect Transistors (SLCFETs). EL intensity captured during off-state stressing has been correlated with an increase in gate leakage current after stress. Two off-state constant-voltage stress conditions were used, both applied over a stress time (t(stress)) of 90 seconds: (a) V-GS = -12 V, V-DS = 12 V, and (b) V-GS = -12 V, V-DS = 14 V. The integrated EL intensity was found to scale with the ratio of off-state gate leakage current before and after the stress. The results were verified using step-stress tests to find the breakdown voltage (BV) of the gate dielectric of the stressed devices. BV was again found to scale with the measured integrated EL intensity for both the stress conditions. The results show that a short duration off-state stress in conjunction with EL can be a beneficial tool for quick assessment of the quality of gate dielectric across the wafer without incurring any significant damage to the devices. This becomes especially useful for rapid on-wafer device screening during large-scale production.

引用

页码：2503 / 2505

页数：3