Magnetic properties of M -doped (M=Mn, Cr, or V) ZnSi N2

被引：0

作者：

Rufinus, Jeff ^{[1
]}

机构：

[1] Science Division, Widener University, Chester, PA 19013, United States

来源：

Journal of Applied Physics | 2009年 / 105卷 / 07期

关键词：

The current interest in the emerging field of semiconductor spintronics is mostly focused on transition-metal-doped binary materials; e.g; Mn-doped GaAs; GaN; etc; Recently; however; the explorations of transition-metal-doped ternary semiconductors have intensified due to some experimental confirmations of high Curie temperature in chalcopyrite compounds. In ternary materials; there are possibilities of having ferromagnetic or antiferromagnetic configurations; depending on which metal site was substituted by the dopant. A density functional theory within generalized gradient approximation study was performed on M -doped (M=Mn; Cr; or V) ternary material ZnSi N2. The objective of this study is to determine whether substitutional transition metal in a group II (Zn) site and in a group IV (Si) site will be ferromagnetic or antiferromagnetic. The results show both Mn- and Cr-doped ZnSi N2 to be antiferromagnetic if (Mn; Cr) substitute Zn site and ferromagnetic if (Mn; Cr) substitute Si site. On the other hand; V-doped ZnSi N2 was found to be ferromagnetic; independent of the substitution sites. © 2009 American Institute of Physics;

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摘要：

Journal article (JA)

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