Air-stable, solution-processable n-channel and ambipolar semiconductors for thin-film transistors based on the indenofluorenebis(dicyanovinylene) core

被引：0
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作者：
Usta, Hakan [1 ]
Facchetti, Antonio [1 ]
Marks, Tobin J. [1 ]
机构：
[1] Department of Chemistry, Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL 60208, United States
来源：
Journal of the American Chemical Society | 2008年 / 130卷 / 27期
关键词：
We present here the synthesis; characterization; and field-effect performance of a novel n-channel semiconducting molecule TIFDMT and of the corresponding thiophene-based copolymer P-IFDMT4 based on the indenofluorenebis(dicyanovinylene) core. TIFDMT-based field-effect transistors fabricated by spin-coating exhibit high electron mobilities of 0.10-0.16 cm2/V s in air; low turn-on voltages (∼0 to +5 V); and high on/off ratios of 107-108. These devices also exhibit excellent air stability over a prolonged time of storage in ambient conditions. P-IFDMT4-based devices exhibit the first example of an air-stable ambipolar polymer processable from solution. Copyright © 2008 American Chemical Society;
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页码：8580 / 8581
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