Fabrication of GaN nanowires by ammoniating Ga2O3/TiO2/Si films

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Institute of Semiconductor, Shandong Normal University, Jinan 250014, China [1 ]
不详 [2 ]
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Nami Jishu yu Jingmi Gongcheng | 2006年 / 4卷 / 279-281期
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