Fabrication of GaN nanowires by ammoniating Ga2O3/TiO2/Si films

被引：0
|
作者：
Institute of Semiconductor, Shandong Normal University, Jinan 250014, China [1 ]
不详 [2 ]
机构：
来源：
Nami Jishu yu Jingmi Gongcheng | 2006年 / 4卷 / 279-281期
关键词：
Electric wire;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Optical and Micro-structural Properties of GaN Nanowires by Ammoniating Ga2O3/Nb Films
    Zhuang Huizhao
    Li Baoli
    Wang Dexiao
    Shen Jiabing
    Zhang Shiying
    Xue Chengshan
    RARE METAL MATERIALS AND ENGINEERING, 2009, 38 (04) : 565 - 569
  • [22] Synthesis of large scale GaN nanowires by ammoniating Ga2O3/Co thin films deposited on Si(111) substrates
    Qin, L. X.
    Xue, C. S.
    Zhuang, H. Z.
    Yang, Z. Z.
    Chen, J. H.
    Li, H.
    Zhang, D. D.
    MATERIALS SCIENCE AND TECHNOLOGY, 2008, 24 (05) : 585 - 588
  • [23] Formation of GaN films by ammoniating Ga2O3 films on In2O3 layer deposited on Si (111) substrates
    Xue, Cheng-Shan
    Wang, Fu-Xue
    Zhuang, Hui-Zhao
    Zhang, Xiao-Kai
    Ai, Yu-Jie
    Sun, Li-Li
    Chen, Jin-Hua
    Qin, Li-Xia
    Gongneng Cailiao/Journal of Functional Materials, 2007, 38 (10): : 1632 - 1634
  • [24] Growth of β-Ga2O3 nanorods by ammoniating Ga2O3/V thin films on Si substrate
    王公堂
    薛成山
    杨兆柱
    Chinese Physics B, 2008, 17 (04) : 1326 - 1330
  • [25] Growth of β-Ga2O3 nanorods by ammoniating Ga2O3/V thin films on Si substrate
    College of Physics and Electronics, Shandong Normal University, Jinan 250014, China
    Chin. Phys., 2008, 4 (1326-1330):
  • [26] Growth of β-Ga2O3 nanorods by ammoniating Ga2O3/V thin films on Si substrate
    Wang Gong-Tang
    Xue Cheng-Shan
    Yang Zhao-Zhu
    CHINESE PHYSICS B, 2008, 17 (04) : 1326 - 1330
  • [27] Synthesis of GaN cauliflowers by ammoniating Ga2O3
    Bao, Keyan
    Wang, Liangbiao
    Yan, Jiawei
    Sun, Hongxian
    Guo, Ruiting
    Wu, Yapei
    JOURNAL OF ALLOYS AND COMPOUNDS, 2013, 552 : 26 - 30
  • [28] Fabrication and photoluminescence of GaN nanorods by ammoniating Ga2O3 films deposited on Co-coated Si(111) substrates
    Qin, Lixia
    Xue, Chengshan
    Duan, Yifeng
    Shi, Liwei
    PHYSICA B-CONDENSED MATTER, 2009, 404 (02) : 190 - 193
  • [29] Synthesis of large-scale GaN nanowires by ammoniating Ga2O3 films on Co layer deposited on Si(111) substrates
    Qin Li-Xia
    Xue Cheng-Shan
    Zhuang Hui-Zhao
    Yang Zhao-Zhu
    Chen Jin-Hua
    Li Hong
    CHINESE PHYSICS B, 2008, 17 (06) : 2180 - 2183
  • [30] Synthesis of large-scale GaN nanowires by ammoniating Ga2O3 films on Co layer deposited on Si(111) substrates
    秦丽霞
    薛成山
    庄惠照
    杨兆柱
    陈金华
    李红
    Chinese Physics B, 2008, 17 (06) : 2180 - 2183
12345