Analysis of amorphous silicon passivation layer in heterojunction solar cells by spectroscopic ellipsometry

被引：0
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作者：
Research Center for New Energy Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai [1 ]
201800, China
不详 [2 ]
Jiangsu
213031, China
不详 [3 ]
100049, China
机构：
来源：
Guangxue Xuebao | / 6卷
关键词：
Dielectric functions - Effective Medium Approximation - Heterojunction solar cells - Hydrogenated amorphous silicon (a-Si:H) - Hydrogenated amorphous silicon films - Minority carrier lifetimes - Optoelectronic properties - Silicon heterojunctions;
D O I：
10.3788/AOS201535.0631002
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