Electroluminescent characteristics of CdSe colloidal quantum dots

被引：0

作者：

Lou, Teng-Gang ^{[1
]}

Hu, Lian ^{[1
]}

Wu, Dong-Kai ^{[1
]}

Du, Ling-Xiao ^{[1
]}

Cai, Chun-Feng ^{[1
]}

Si, Jian-Xiao ^{[2
]}

Wu, Hui-Zhen ^{[1
]}

机构：

[1] State Key Laboratory of Silicon Materials, Department of Physics, Zhejiang University

[2] Department of Physics, Zhejiang Normal University

来源：

Wuji Cailiao Xuebao/Journal of Inorganic Materials | 2012年 / 27卷 / 11期

关键词：

CdSe; Electroluminescence; Photoluminescence; Quantum dots;

D O I：

10.3724/SP.J.1077.2012.12027

中图分类号：

学科分类号：

摘要：

Electroluminescent (EL) devices with an ITO/ZnS/CdSe/ZnS/Al structure were fabricated using chemically synthesized colloidal CdSe quantum dots (QDs) as active layer. The size of the CdSe QDs is about 4.3 nm measured by a transmission electron microscope. Scanning electron microscope characterization shows smooth surfaces of ZnS layers and Al electrodes. CdSe (111) and ZnS (111) diffraction peaks are observed in the X-ray diffraction patterns, verifying the incorporation of CdSe QDs and ZnS insulator materials in the devices. Room temperature photoluminescence (PL) spectra reveal that the CdSe QDs' emission peak is located at 614 nm. EL measurements at room temperature show a broad emission band ranging from 450 nm to 850 nm with a peak wavelength located at about 800 nm. Finally, the light emitting mechanism for the EL devices is proposed and the discrepancy between PL and EL spectra is interpreted.

引用

页码：1211 / 1215

页数：4

共 19 条

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