The effect of temperature on the morphology of Ge/Si quantum dots grown by ion beam sputtering

被引：0
|
作者：
Zhang, Xue-Gui [1 ]
Wang, Chong [1 ]
Yang, Jie [1 ,2 ]
Pan, Hong-Xing [1 ]
Lu, Zhi-Quan [1 ]
Li, Liang [1 ]
Yang, Yu [1 ]
机构：
[1] Institute of Optoelectronic Information Materials, Academy of Engineering and Technology, Yunnan University, Kunming 650091, China
[2] Faculty of Metallurgical and Engineering, Kunming University of Science and Technology, Kunming 650093, China
来源：
Gongneng Cailiao/Journal of Functional Materials | 2010年 / 41卷 / 11期
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页码：1982 / 1985
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