Band edge model of (101)-biaxial strained Si

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作者：

Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China ^{[1
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来源：

Pan Tao Ti Hsueh Pao | 2008年 / 9卷 / 1670-1673期

关键词：

Dissociation - Semiconductor alloys - Si-Ge alloys - Electron energy levels;

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摘要：

A band edge model in (101)-biaxial strained Si on relaxed Si1-xGex alloy, or monoclinic Si (m-Si), is presented using the k p perturbation method coupled with deformation potential theory. Results show that the [001], [001], [100], [100] valleys constitute the conduction band (CB) edge, which moves up in electron energy as the Ge fraction (x) increases. Furthermore, the CB splitting energy is in direct proportion to x and all the valence band (VB) edges move up in electron energy as x increases. In addition, the decrease in the indirect bandgap and the increase in the VB edge splitting energy as x increases are found. The quantitative data from the models supply valuable references for the design of the devices.

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