Quantification of the ion and momentum fluxes toward the substrate during reactive magnetron sputtering

被引：0

作者：

Mahieu, S. ^{[1
]}

Van Aeken, K. ^{[1
]}

Depla, D. ^{[1
]}

机构：

[1] Department for Solid State Sciences, Ghent University, Krijgslaan 281 (S1) 9000, Ghent 9000, Belgium

来源：

Journal of Applied Physics | 2008年 / 104卷 / 11期

关键词：

The ion and momentum fluxes toward the growing film during reactive magnetron sputtering of a Ti target in a mixture of Ar and N2 are determined. For the ion flux and ion energy distribution a retarding field energy analyzer has been employed. The results were confronted with planar and cylindrical probe measurements; two more common used techniques. For the momentum flux; energy resolved mass spectrometry and simulations with the binary collision Monte Carlo code SIMTRA were performed to determine the contribution to this flux by the impact of ions and sputtered and reflected particles. Based on the quantification of both fluxes; it can be concluded that there is a relation between the hardness and elastic modulus of the TiN films and the momentum flux. © 2008 American Institute of Physics;

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摘要：

Journal article (JA)

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