Influence of Janus structure on the thermoelectric performance of the α-Se monolayer

被引：0
|
作者：
Liu, Q.H. [1 ]
Shi, H.L. [2 ]
Han, Q.Z. [3 ]
Yang, J. [4 ]
Zhao, Y.H. [5 ,6 ]
Gong, L.J. [1 ]
Yang, H. [1 ]
Cheng, R.S. [1 ]
Jiang, Z.T. [1 ]
机构：
[1] School of Physics, Beijing Institute of Technology, Beijing,100081, China
[2] Institute of Solid State Physics, Shanxi Datong University, Datong,037009, China
[3] Beijing Academy of Quantum Information Sciences, Beijing,100193, China
[4] Shandong Graphenjoy Advanced Material Co., Ltd., Dezhou,253072, China
[5] School of Chemical Engineering, University of Chinese Academy of Sciences, Beijing,100049, China
[6] National Basic Science Data Center, Beijing,100190, China
来源：
Journal of Applied Physics | 1600年 / 136卷 / 20期
基金：
中国国家自然科学基金;
关键词：
Carrier concentration - Monolayers - Phonons - Semiconducting selenium - Semiconducting selenium compounds - Semiconducting tellurium - Semiconducting tellurium compounds - Wide band gap semiconductors;
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