Linear growth kinetics of nanometric silicides in Co/amorphous-Si and Co/CoSi/amorphous-Si thin films

被引：0
|
作者：
Cserháti, C. [1 ]
Balogh, Z. [1 ]
Csik, A. [1 ]
Langer, G.A. [1 ]
Erdélyi, Z. [1 ]
Glodán, Gy. [1 ]
Katona, G.L. [1 ]
Beke, D.L. [1 ]
Zizak, I. [2 ]
Darowski, N. [2 ]
Dudzik, E. [2 ]
Feyerherm, R. [2 ]
机构：
[1] Department of Solid State Physics, University of Debrecen, P. O. Box. 2, H-4010 Debrecen, Hungary
[2] Hahn-Meitner-Institut Berlin, Glienicker Straße 100, D-14109 Berlin, Germany
来源：
Journal of Applied Physics | 2008年 / 104卷 / 02期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [21] Interfacial Mechanics of Carbon Nanotube@ Amorphous-Si Coaxial Nanostructures
    Liao, Hongwei
    Karki, Khim
    Zhang, Yin
    Cumings, John
    Wang, YuHuang
    ADVANCED MATERIALS, 2011, 23 (37) : 4318 - 4322
  • [22] Crystallization of amorphous-Si films by pulsed YAG2ω green laser for polycrystalline Si TFT fabrication
    Yura, S
    Sono, A
    Okamoto, T
    Sato, Y
    Kojima, T
    Nishimae, J
    Inoue, M
    Motonami, K
    JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY, 2005, 13 (10) : 823 - 827
  • [23] Deformation mechanisms of Al/amorphous-Si core-shell nanorods
    Muller, Scott E.
    Nair, Arun K.
    MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING, 2019, 27 (04)
  • [24] Highly reliable poly-SiGe/amorphous-Si gate CMOS
    Uejima, K
    Yamamoto, T
    Mogami, T
    INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, : 445 - 448
  • [25] Integrated Amorphous-Si TFT Circuits for Gate Drivers on LCD Panels
    Huang, Nan-Xiong
    Han, Hsi Rong
    Liao, Wen Tui
    Huang, Chih Hung
    Wang, Wen Chun
    Shiau, Miin-Shyue
    Cheng, Ching-Hwa
    Wu, Hong-Chong
    Hsu, Heng-Shou
    Liou, Juin J.
    Liao, Shry-Sann
    Sun, Ruei-Cheng
    Lu, Guang-Bao
    Liu, Don-Gey
    2013 IEEE 10TH INTERNATIONAL CONFERENCE ON ASIC (ASICON), 2013,
  • [26] Poly-Si stripe TFTs by Grain-Boundary Controlled Crystallization of Amorphous-Si
    Brunets, Ihor
    Holleman, Jisk
    Kovalgin, Alexey Y.
    Schmitz, Jurriaan
    ESSDERC 2008: PROCEEDINGS OF THE 38TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2008, : 87 - 90
  • [27] IMPROVEMENT OF RADIATION HARDNESS IN POLY-SI GATE MOS CAPACITOR BY USE OF AMORPHOUS-SI
    CHANGLIAO, KS
    CHUANG, CC
    ELECTRONICS LETTERS, 1994, 30 (18) : 1540 - 1542
  • [28] Interface effects on the electroluminescence spectra in amorphous-Si/silicon oxynitride multilayer structures
    WANG Xiang*
    Science China(Physics,Mechanics & Astronomy), 2012, Mechanics & Astronomy)2012 (07) : 1194 - 1197
  • [29] High-performance hydrogenated amorphous-Si TFT for AMLCD and AMOLED applications
    Chen, CW
    Chang, TC
    Liu, PT
    Lu, HY
    Wang, KC
    Huang, CS
    Ling, CC
    Tseng, TY
    IEEE ELECTRON DEVICE LETTERS, 2005, 26 (10) : 731 - 733
  • [30] Interface effects on the electroluminescence spectra in amorphous-Si/silicon oxynitride multilayer structures
    Xiang Wang
    Rui Huang
    Chao Song
    Jie Song
    YanQing Guo
    Science China Physics, Mechanics and Astronomy, 2012, 55 : 1194 - 1197
12345