A comprehensive review of diamond wire sawing process for single-crystal hard and brittle materials

Diamond wire sawing (DWS) is the primary stage in the semiconductor industry for slicing hard and brittle materials, delivering high surface quality with minimum kerf losses. Despite its advantages, the DWS process encounters significant challenges, such as low material removal rate (MRR), prolonged processing times, and accelerated diamond wire wear when slicing silicon (Si) and silicon carbide (SiC) due to their inherent hardness. While notable advancements have been made in understanding the DWS process and its application across various hard and brittle materials, challenges related to improving surface quality and reducing processing time persist. The primary hurdles buried in this process are the use of inappropriate process parameters and incomprehensible material properties, leading to high temperatures in the sawn region, kerf loss, warpages, and cracks on the sawn wafer. Therefore, this review paper aims to present a comprehensive analysis of the DWS process, focusing on various types of hard and brittle materials, the effects of sawing forces and temperatures, and optimization of process parameters to enhance surface quality, reduce kerf losses, and facilitate the recycling of sawing debris. Furthermore, it explores sustainable strategies for process enhancement and outlines promising future research directions in this field.