Design and process of 3D MEMS system-in-package (SiP)

被引:0
|
作者
Lau J.H. [1 ]
机构
[1] Electronics and Optoelectronics Laboratory (EOL), Industrial Technology Research Institute (ITRI), Chutung
关键词
3D IC integration; Low-tempera-ture bonding; MEMS; SiP; TSV; Wafer-level packaging;
D O I
10.4071/1551-4897-7.1.10
中图分类号
学科分类号
摘要
The design and assembly process of 10 different 3D MEMS packages will be presented and discussed in this study. These 3D MEMS packages integrate the MEMS devices from the MEMS wafer (with either wirebonding pads, or solder-bumped TSV, through silicon via, substrate, or solder-bumped flip chip without TSV), the ASIC chips from the ASIC wafer (either with or without TSV), and the cavity package cap from the cap wafer (either with or without TSV). The assembly process consists of release (etching), singulation, wire bonding, flip chip, TSV, cavity etching, chip-to-wafer (C2W) bonding, and wafer-to-wafer (W2W) bonding. It can be shown that these packages lead to a small packaging footprint, high electrical performance, and potentially low cost.
引用
收藏
页码:10 / 15
页数:5
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