Highly reactive organopalladium catalyst formed on sulfur-terminated GaAs(001)-(2 × 6) surface

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作者：
Takamiya, Ikuko [1 ,2 ]
Tsukamoto, Shiro [1 ]
Shimoda, Masahiko [3 ]
Arisawa, Mitsuhiro [2 ,4 ]
Nishida, Atsushi [2 ]
Arakawa, Yasuhiko [1 ]
机构：
[1] Nanoelectronics Collaborative Research Center, University of Tokyo, Tokyo 153-8505, Japan
[2] Graduate School of Pharmaceutical Sciences, Chiba University, Chiba 263-8522, Japan
[3] National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
[4] Graduate School of Pharmaceutical Sciences, Hokkaido University, Kita 12, Nishi 6, Kita-ku, Sapporo 060-0812, Japan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 2006年 / 45卷 / 17-19期
关键词：
Highly reactive organopalladium catalysts have been successfully developed on a sulfur-terminated (S-terminated) GaAs(001) substrate; which has a highly uniform (2 × 6) reconstructed surface formed by molecular-beam epitaxy. This new material catalyzed the coupling reaction of iodobenzene and methyl acrylate and could be used repeatedly at least ten times to give good to excellent yields in the Heck reaction. The immobilization of organopalladium in acetonitrile at 100°C followed by treatment at elevated temperature in acetonitrile is essential for producing an active and stable catalyst on S-terminated GaAs(001). Moreover; we have shown that the amount of S-Ga bonds is responsible for stabilizing the activity of the catalyst. In addition; we examined the physical character of organopalladium on a surface before and after the Heck reaction by X-ray photoelectron spectroscopy (XPS). © 2006 The Japan Society of Applied Physics;
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