Tuning of intraband absorption and photoresponse in self-assembled InAsGaAs quantum dots by thermal annealing

被引：0

作者：

Ng, W.H. ^{[1
]}

Zibik, E.A. ^{[1
]}

Wilson, L.R. ^{[1
]}

Skolnick, M.S. ^{[1
]}

Cockburn, J.W. ^{[1
]}

Steer, M.J. ^{[2
]}

机构：

[1] Department of Physics and Astronomy, University of Sheffield, Sheffield S3 7RH, United Kingdom

[2] EPSRC National Centre for III-V Technologies, Sheffield S1 3JD, United Kingdom

来源：

Journal of Applied Physics | 2008年 / 103卷 / 06期

关键词：

The effects of the thermal annealing on the conduction band states in self-assembled quantum dots (QDs) have been investigated using midinfrared absorption and photocurrent spectroscopies. We demonstrate a significant tuning of the intraband electron transition energies (∼15%) upon annealing due to the reduction in the confinement energy; observed both in intraband absorption and photocurrent spectra. More uniform QD size distribution in the growth direction after annealing results in narrowing of the absorption peak. We also observe additional intersublevel transitions arising after QD annealing. © 2008 American Institute of Physics;

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摘要：

Journal article (JA)

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