Temperature dependence of the subthreshold characteristics of dynamic threshold metal-oxide-semiconductor field-effect transistors and its application to an absolute-temperature sensing scheme for low-voltage operation

被引：0

作者：

Terauchi, Mamoru ^{[1
]}

机构：

[1] Faculty of Information Sciences, Hiroshima City University, Hiroshima 731-3194, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2007年 / 46卷 / 7 A期

关键词：

In this report the author proposes an absolute-temperature sensing scheme based on the temperature dependence of the subthreshold current-voltage characteristics of dynamic threshold metal-oxide-semiconductor (DTMOS) field-effect transistor devices. The proposed sensing scheme requires neither a voltage higher than 0.5 V nor initial precise calibration. It is suitable for silicon-on-insulator (SOI) circuits based on the SOI technology using an SOI substrate; but it can also be easily applied to bulk MOS devices. ©2007 The Japan Society of Applied Physics;

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摘要：

Journal article (JA)

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页码：4102 / 4104