Superior role of V2O5 and yttrium interface layers in enhancing MIS radical photodiode performance

In this study, Cu/n-Si Schottky diodes with V2O5-Y insulating interface layer were designed for the fabrication of metal/insulator/semiconductor (MIS) structures. The effects of different Y-V2O5 interface layers placed between metals and semiconductors on the critical electrical parameters of Schottky diodes were examined. Electrical parameters of the prepared sample such as barrier height (Phi B), ideality factor (n), photosensitivity (Ps), photosensitivity (R), quantum efficiency (QE) and detectivity (D*) were obtained from the expression. Characteristics of I-V The modification in these parameters can be attributed to the use of Schottky diodes as intermediate layers. Additionally, n, Phi B values were calculated using the thermionic emission process and the photodiode parameters Ps, R, QE and D* the results were compared with each other. Experiments have shown that the Schottky structure with V2O5-Y interlayer leads to higher values of Ps = 799.70 % and under the light condition of 6 wt% of Y lower value n = 2.01. This provides evidence of the improved performance of MIS models.