Impact of reducing shallow trench isolation mechanical stress on active length for 40nm n-type metal-oxide-semiconductor field-effect transistors

被引：0

作者：

Huang, Yao-Tsung ^{[1
]}

Wu, San-Lein ^{[2
]}

Lin, Hau-Yu ^{[1
]}

Kuo, Cheng-Wen ^{[1
]}

Chang, Shoou-Jinn ^{[1
]}

Hong, De-Gong ^{[2
]}

Wu, Chung-Yi ^{[1
]}

Huang, Cheng-Tung ^{[3
]}

Cheng, Osbert ^{[3
]}

机构：

[1] Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan

[2] Department of Electronic Engineering, Cheng Shiu University, Niaosong, Kaohsiung 833, Taiwan

[3] United Microelectronics Corporation, Ltd., Tainan Science-Based Industrial Park, Tainan 74145, Taiwan

来源：

Japanese Journal of Applied Physics | 2011年 / 50卷 / 4 PART 2期

关键词：

Compendex;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

MOSFET devices

引用