Experimental Demonstration of Dual-Mode PUF/Memory Based on SOT-MRAM Array

被引:0
|
作者
Wang, Min [1 ]
Hou, Zhengyi [1 ]
Jiang, Chuanpeng [1 ]
Zhao, Yuanfu [2 ]
Wang, Bi [1 ]
Zhao, Weisheng
Wang, Zhaohao [1 ,3 ]
机构
[1] Beihang Univ, Sch Integrated Circuit Sci & Engn, Fert Beijing Inst, MIIT Key Lab Spintron, Beijing 100191, Peoples R China
[2] Beijing Microelect Technol Inst, Beijing 100076, Peoples R China
[3] Beihang Univ, Int Innovat Inst, Natl Key Lab Spintron, Hangzhou 311115, Peoples R China
基金
中国国家自然科学基金;
关键词
Dual-mode design; physical unclonable function; SOT-MRAM; static entropy; MEMORY;
D O I
10.1109/LED.2024.3470758
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The state-of-the-art dual-mode design executes the physical unclonable function (PUF) based on the static entropy source, which is theoretically independent of the memory function. Reuse of memory arrays contributes to multifunctional simultaneous operation and high efficiency. In our study, we first extend the dual-mode design on the fabricated spin-orbit-torque (SOT) arrays. Using 180nm CMOS technology, the basic cell includes the complementary pair of two flexible-controlled 2T1J structures. The refined readout methods are discussed to expand the challenge-response pairs (CRPs) space and reduce the impact of memory-related issues within PUF mode. The proposed PUF presents 49.84% uniformity and 49.72% inter-HD. By analyzing in depth the spatial dependence of process consistency, the non-ideal-CRP percentage decreased from 17.61% to 9.14%, effectively enhancing the reliability. Our findings pave the way for advancing SOT-MRAM in security solutions.
引用
收藏
页码:2379 / 2382
页数:4
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