High-power true green laser diodes on semipolar {20-21} GaN substrates

被引：0

作者：

机构：

[1] Katayama, Koji

[2] Saga, Nobuhiro

[3] Ueno, Masaki

[4] Ikegami, Takatoshi

[5] Nakamura, Takao

来源：

Saga, N. (saga-nobuhiro@sei.co.jp) | 1600年 / Institute of Electrical Engineers of Japan卷 / 133期

关键词：

GaN substrate - Green - Optical output power - Output power - Semi-polar - Spectral region - Wallplug efficiency - Wavelength ranges;

D O I：

10.1541/ieejeiss.133.1449

中图分类号：

学科分类号：

摘要：

InGaN green laser diodes (LDs) on semipolar {20-21} GaN substrates with output powers of over 100 mW in the spectral region beyond 530 nm is demonstrated. Wall plug efficiencies as high as 7.0-8.9% are realized in the wavelength range of 525-532 nm, which exceed those reported for c-plane LDs. The lifetime at a case temperature of 55°C was estimated to be over 5000 hours for an optical output power of 50 mW. These results suggest that InGaN green LDs on the {20-21} plane are better suited as light sources for applications requiring wavelengths over 525 nm. © 2013 The Institute of Electrical Engineers of Japan.

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