A 120 GHz Hybrid Low Noise Amplifier in 40 nm CMOS

被引:0
|
作者
Cho, Dong Ouk [1 ]
Yoo, In Cheol [1 ]
Kang, Dong-Woo [2 ]
Koo, Bon Tae [2 ]
Byeon, Chul Woo [1 ]
机构
[1] Dankook Univ, Sch Elect & Elect Engn, Yongin 16890, South Korea
[2] Elect & Telecommun Res Inst, AI SoC Res Div, Daejeon 34129, South Korea
来源
IEEE ACCESS | 2024年 / 12卷
关键词
120; GHz; common-source; CMOS; D-band; hybrid LNA; low-noise amplifier; millimeter-wave; noise figure; sub-terahertz; 65-NM CMOS; WIDE-BAND; HIGH-GAIN; RECEIVER;
D O I
10.1109/ACCESS.2024.3497010
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
In this paper, we present a 6-stage 120 GHz hybrid low noise amplifier (LNA) for sub-THz radar systems. To enhance the noise figure (NF) and gain performance of the LNA, we propose a hybrid architecture that utilizes a combination of 2-stage single-ended and 4-stage differential common-source amplifiers. The first 2-stage single-ended common-source amplifier provides low-loss and low-noise characteristics, while the 4-stage differential common-source amplifier provides high gain, resulting in low noise and high gain performance. Implemented in a 40 nm CMOS process, the LNA occupies a chip area of 0.099 mm2 excluding the pads. The measurement results show that the proposed LNA achieves a low NF of 5.5 dB, a high gain of 27.5 dB, and an input 1-dB compression point of -29.5 dBm at 122.5 GHz with a power consumption of 27.4 mW.
引用
收藏
页码:168010 / 168017
页数:8
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