A 120 GHz Hybrid Low Noise Amplifier in 40 nm CMOS

被引:0
|
作者
Cho, Dong Ouk [1 ]
Yoo, In Cheol [1 ]
Kang, Dong-Woo [2 ]
Koo, Bon Tae [2 ]
Byeon, Chul Woo [1 ]
机构
[1] Dankook Univ, Sch Elect & Elect Engn, Yongin 16890, South Korea
[2] Elect & Telecommun Res Inst, AI SoC Res Div, Daejeon 34129, South Korea
来源
IEEE ACCESS | 2024年 / 12卷
关键词
120; GHz; common-source; CMOS; D-band; hybrid LNA; low-noise amplifier; millimeter-wave; noise figure; sub-terahertz; 65-NM CMOS; WIDE-BAND; HIGH-GAIN; RECEIVER;
D O I
10.1109/ACCESS.2024.3497010
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
In this paper, we present a 6-stage 120 GHz hybrid low noise amplifier (LNA) for sub-THz radar systems. To enhance the noise figure (NF) and gain performance of the LNA, we propose a hybrid architecture that utilizes a combination of 2-stage single-ended and 4-stage differential common-source amplifiers. The first 2-stage single-ended common-source amplifier provides low-loss and low-noise characteristics, while the 4-stage differential common-source amplifier provides high gain, resulting in low noise and high gain performance. Implemented in a 40 nm CMOS process, the LNA occupies a chip area of 0.099 mm2 excluding the pads. The measurement results show that the proposed LNA achieves a low NF of 5.5 dB, a high gain of 27.5 dB, and an input 1-dB compression point of -29.5 dBm at 122.5 GHz with a power consumption of 27.4 mW.
引用
收藏
页码:168010 / 168017
页数:8
相关论文
共 50 条
  • [1] A 120 GHz gm-boosting Low-Noise Amplifier in 40-nm CMOS
    Yoo, In Cheol
    Cho, Dong Ouk
    Kang, Dong-Woo
    Koo, Bontae
    Byeon, Chul Woo
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2025, 72 (01) : 153 - 157
  • [2] 2 GHz, 130 nm CMOS low noise amplifier for WCDMA
    Pienkowski, D
    Circa, R
    Boeck, G
    2005 SBMO/IEEE MTT-S INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE (IMOC), 2005, : 105 - 109
  • [3] 60 GHz compact low noise amplifier in 65 nm CMOS
    Kunze, J. W.
    Weyers, C.
    Mayr, P.
    Bilgic, A.
    Hausner, J.
    ELECTRONICS LETTERS, 2009, 45 (20) : 1035 - U46
  • [4] A 15 GHz and a 20 GHz low noise amplifier in 90 nm RF-CMOS
    Aspemyr, L
    Jacobsson, H
    Bao, MQ
    Sjöland, H
    Femdahl, M
    Carchon, G
    2006 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS, 2006, : 387 - +
  • [5] A CMOS low noise amplifier at 2.1 GHz
    Tie, Hong'an
    Li, Fuxiao
    Li, Xiangyang
    Feng, Xiaohui
    Yao, Xiang
    Wei, Qian
    Zhang, Bin
    Weng, Changyu
    Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics, 2008, 28 (02): : 212 - 214
  • [6] 30 GHz CMOS low noise amplifier
    Adabi, Ehsan
    Heydari, Babak
    Bohsali, Mounir
    Niknejad, Ali M.
    2007 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2007, : 625 - +
  • [7] A 1.5 GHz CMOS low noise amplifier
    Fujimoto, R
    Otaka, S
    Iwai, H
    Tanimoto, H
    IEICE TRANSACTIONS ON FUNDAMENTALS OF ELECTRONICS COMMUNICATIONS AND COMPUTER SCIENCES, 1998, E81A (03) : 382 - 388
  • [8] A 260 GHz Low Phase Noise VCO in 40 nm CMOS Technology
    Zhou, Zhongliang
    Li, Qin
    2019 INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY (ICMMT 2019), 2019,
  • [9] Digital Trimmable 24 GHz Low-Noise Amplifier in 65 nm CMOS
    Vehring, Soenke
    Ding, Yaoshun
    Boeck, Georg
    2018 22ND INTERNATIONAL MICROWAVE AND RADAR CONFERENCE (MIKON 2018), 2018, : 496 - 499
  • [10] 1.58 GHz Low Noise Amplifier Design and Verification in 130 nm CMOS Technology
    Surin, Igor K.
    Antonov, Andrey A.
    Shlemin, Dmitry L.
    2018 19TH INTERNATIONAL CONFERENCE OF YOUNG SPECIALISTS ON MICRO/NANOTECHNOLOGIES AND ELECTRON DEVICES (EDM 2018), 2018, : 231 - 234