A Three-Conductor Transmission Line Model for MOS Transistors

被引：0
作者：
Daneshmandian, F. [1 ]
Abdipour, A. [1 ]
Mirzavand, R. [1 ]
机构：
[1] Amirkabir Univ Technol, Dept Elect Engn, Inst Commun Technol & Appl Electromagnet, Micro Mm Wave & Wireless Comm Res Lab, Tehran 15914, Iran
来源：
APPLIED COMPUTATIONAL ELECTROMAGNETICS SOCIETY JOURNAL | 2015年 / 30卷 / 06期
关键词：
CMOS technology; distributed analysis; FDTD method; MOSFET model; transmission line model; FDTD ANALYSIS; CIRCUITS; RESISTANCE; DEVICES; IMPACT;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An accurate high frequency small signal model for MOS transistors is presented. In the proposed model, by considering the layout of the MOS transistor, it is considered as a three-conductor transmission line. Then, a set of current-voltage equations are derived for the structure using the transmission line theory. These coupled equations are solved by the Finite-Difference Time-Domain (FDTD) technique in a marching-in-time process. To verify the model, the scattering parameters of a 0.13 mu m transistor are extracted from the time domain results over the 1-100 GHz frequency band and compared with the results obtained from the available models and commercial simulator. The suggested model can be useful in design of various types of high frequency integrated circuits.
引用
收藏
页码：670 / 676
页数：7
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