Research on silicon optoelectronic integrated circuits

被引：0

作者：

State Key Lab. on Integrated Optoelectronics, Institute of Semiconductors, CAS, Beijing 100083, China ^{[1
]}

机构：

来源：

Guangdianzi Jiguang | 2006年 / SUPPL.卷 / 280-282期

关键词：

Integrated optoelectronics - Light emitting diodes - Optical waveguides - Photodetectors - Silicon;

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学科分类号：

摘要：

The paper presents the research on the silicon optoelectronic integrated circuits (OEIC). Some key problems in the silicon OEIC are discussed in detail, including some research and experimental results of silicon light emitting devices, silicon light waveguides, silicon light detectors and their accessorial integrated circuits. The silicon photo diode which is fabricated in the standard CMOS technology has the output optical power of 13.6 nW and works steadily over 56 hours. The bandwidth of the integrated circuits including the photo-detector and the preamplifier is over 754 MHz. The paper also introduces the idea that is to integrate all these devices in amonolithic integrated circuit with the standard microelectronic technology.

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