Analysis of strain relaxation by microcracks in epitaxial GaAs grown on GeSi substrates

被引：0
|
作者：
Colombo, D. [1 ]
Grilli, E. [1 ]
Guzzi, M. [1 ]
Sanguinetti, S. [1 ]
Marchionna, S. [1 ]
Bonfanti, M. [1 ]
Fedorov, A. [2 ,4 ]
Von Känel, H. [2 ]
Isella, G. [2 ]
Müller, E. [3 ]
机构：
[1] CNISM and L-NESS, Dipartimento di Scienza Dei Materiali, Universitá di Milano Bicocca, Via Cozzi 53, I-20125, Milano, Italy
[2] CNISM and L-NESS, Dipartimento di Fisica Del Politecnico di Milano, Polo di Como, via Anzani 52, I-22100 Como, Italy
[3] Laboratorium für Festkörperphysik, ETH Zürich, CH-8093 Zürich, Switzerland
[4] Tomsk State University, Tomsk, Russia
来源：
Journal of Applied Physics | 2007年 / 101卷 / 10期
关键词：
Semiconducting gallium arsenide;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [21] Compositional inhomogeneity and strain relaxation in InGaAs SQWs MOVPE-grown on tilted GaAs substrates
    Frigeri, C
    Brinciotti, A
    DiPaola, A
    Ritchie, DM
    Longo, F
    Vidimari, F
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 44 (1-3): : 101 - 105
  • [22] STRUCTURAL AND OPTOELECTRONIC PROPERTIES AND THEIR RELATIONSHIP WITH STRAIN RELAXATION IN HETEROEPITAXIAL INP LAYERS GROWN ON GAAS SUBSTRATES
    OLEGO, DJ
    OKUNO, Y
    KAWANO, T
    TAMURA, M
    JOURNAL OF APPLIED PHYSICS, 1992, 71 (09) : 4492 - 4501
  • [23] RAMAN-STUDY OF MISFIT STRAIN AND ITS RELAXATION IN ZNSE LAYERS GROWN ON GAAS SUBSTRATES
    MATSUMOTO, T
    KATO, T
    HOSOKI, M
    ISHIDA, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (05): : L576 - L578
  • [24] Strain relaxation and dislocation filtering in metamorphic HBT and HEMT structures grown on GaAs substrates by MBE
    Fastenau, JM
    Lubyshev, D
    Fang, XM
    Doss, C
    Wu, Y
    Liu, WK
    Bals, S
    Griffith, Z
    Kim, YM
    Rodwell, MJW
    2004 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2004, : 346 - 349
  • [25] ANISOTROPIC STRAIN RELAXATION IN GAAS-LAYERS GROWN ON SI(100) SUBSTRATES BY POSTGROWTH PATTERNING
    TSUKAMOTO, N
    YAZAWA, Y
    ASANO, J
    MINEMURA, T
    APPLIED PHYSICS LETTERS, 1992, 61 (07) : 810 - 812
  • [26] Strain effects in CdTe (111) epitaxial layers grown on GaAs (100) substrates by molecular beam epitaxy
    Han, MS
    Kang, TW
    Leem, JH
    Song, BK
    Hou, YB
    Baek, WH
    Lee, MH
    Bahng, JH
    Kim, KJ
    Kim, JM
    Kim, HK
    Kim, TW
    JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (06) : 507 - 510
  • [27] Strain effects in CdTe (111) epitaxial layers grown on GaAs (100) substrates by molecular beam epitaxy
    M. S. Han
    T. W. Kang
    J. H. Leem
    B. K. Song
    Y. B. Hou
    W. H. Baek
    M. H. Lee
    J. H. Bahng
    K. J. Kim
    J. M. Kim
    H. K. Kim
    T. W. Kim
    Journal of Electronic Materials, 1997, 26 : 507 - 510
  • [28] ARSENIC DOPING OF EPITAXIAL GE GROWN ON GE AND GAAS SUBSTRATES
    ETIENNE, D
    ACHARGUI, N
    BOUGNOT, G
    REVUE DE PHYSIQUE APPLIQUEE, 1986, 21 (05): : 299 - 303
  • [29] Strain effect in ZnSe epilayers grown on GaAs substrates
    Yu, YM
    Nam, S
    O, B
    Lee, KS
    Yu, PY
    Lee, J
    Choi, YD
    JOURNAL OF CRYSTAL GROWTH, 2002, 243 (3-4) : 389 - 395
  • [30] STRAIN RELAXATION OF CDTE(100) LAYERS GROWN BY HOT-WALL EPITAXY ON GAAS(100) SUBSTRATES
    TATSUOKA, H
    KUWABARA, H
    NAKANISHI, Y
    FUJIYASU, H
    JOURNAL OF APPLIED PHYSICS, 1990, 67 (11) : 6860 - 6864
12345