Analysis of strain relaxation by microcracks in epitaxial GaAs grown on GeSi substrates

被引：0
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作者：
Colombo, D. [1 ]
Grilli, E. [1 ]
Guzzi, M. [1 ]
Sanguinetti, S. [1 ]
Marchionna, S. [1 ]
Bonfanti, M. [1 ]
Fedorov, A. [2 ,4 ]
Von Känel, H. [2 ]
Isella, G. [2 ]
Müller, E. [3 ]
机构：
[1] CNISM and L-NESS, Dipartimento di Scienza Dei Materiali, Universitá di Milano Bicocca, Via Cozzi 53, I-20125, Milano, Italy
[2] CNISM and L-NESS, Dipartimento di Fisica Del Politecnico di Milano, Polo di Como, via Anzani 52, I-22100 Como, Italy
[3] Laboratorium für Festkörperphysik, ETH Zürich, CH-8093 Zürich, Switzerland
[4] Tomsk State University, Tomsk, Russia
来源：
Journal of Applied Physics | 2007年 / 101卷 / 10期
关键词：
Semiconducting gallium arsenide;
D O I：
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学科分类号：
摘要：
Journal article (JA)
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