Contact properties of ZnO/Cu films with MSM structure

被引：1

作者：

Dong, Yan-Feng ^{[1
]}

Li, Qing-Shan ^{[1
,2
]}

Zhang, Li-Chun ^{[1
]}

Song, Lian-Ke ^{[3
]}

机构：

[1] College of Physics and Engineering, Qufu Normal University

[2] College of Physics, Ludong University

[3] Laser Research Institute, Qufu Normal University

来源：

Faguang Xuebao/Chinese Journal of Luminescence | 2012年 / 33卷 / 04期

关键词：

Cu electrode; MSM structure; Ohmic contact; ZnO thin films;

D O I：

10.3788/fgxb20123304.0412

中图分类号：

学科分类号：

摘要：

Considering the good conductivity and anti-electromigration and low price, Cu films were prepared as electrodes of ZnO-based devices via pulsed laser deposition method on Si(111) substrates. The XRD and SEM images of ZnO/Cu films were examined and the current-voltage characteristics were measured. The results exhibit that ZnO films are highly c-axis oriented, and Cu films are highly (111) oriented. Ohmic contact can be obtained when the ZnO:Cu layer was involved between the ZnO film and the Cu film, and the Ohmic contact properties can be improved after annealing. Study on how to improve the properties of Ohmic contact of the ZnO/Cu films is still continued. The results indicate that Cu may be used as Ohmic contact electrodes for ZnO-based devices.

引用

页码：412 / 416

页数：4

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