High-power-density 0.25 μm gate-length AlGaN/GaN high-electron-mobility transistors on semi-insulating 6H-SiC substrates

被引：0
|
作者：
Lee, J.-W. [1 ]
Kumar, V. [2 ]
Adesida, I. [2 ]
机构：
[1] Department of Radio Communication Engineering, School of Electronics and Information, Kyung Hee University, 449-701, Korea, Republic of
[2] Micro and Nanotechnology Laboratory, Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801, United States
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2006年 / 45卷 / 1 A期
关键词：
Transistors;
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摘要：
Journal article (JA)
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页码：13 / 17
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