Erratum: Maximizing uniaxial tensile strain in large-area silicon-on-insulator islands on compliant substrates (Journal of Applied Physics (2006) 100 (023537))

被引：0

作者：

Peterson, R.L.

Hobart, K.D.

Yin, H.

Kub, F.J.

Sturm, J.C.

机构：

[1] Princeton Institute for the Science and Technology of Materials, Princeton University, Princeton, NJ 08540, United States

[2] Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, United States

[3] Naval Research Laboratory, Washington, DC 20375 20375, United States

[4] Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom

来源：

Journal of Applied Physics | 1600年 / 100卷 / 12期

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摘要：

Erratum (ER)

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