Output power of an AlGaN/GaN HFET on sapphire substrate

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作者：
School of Information Engineering, Hebei University of Technology, Tianjin 300130, China [1 ]
不详 [2 ]
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来源：
Pan Tao Ti Hsueh Pao | 2006年 / 7卷 / 1255-1258期
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Semiconductor devices;
D O I：
10.1002/fld.1150
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