共 21 条
- [1] Chakhalian J., Millis A.J., Rondinelli J., Whither the oxide interface, Nat. Mater., 11, 2, pp. 92-94, (2012)
- [2] Hwang H.Y., Iwasa Y., Kawasaki M., Et al., Emergent phenomena at oxide interfaces, Nat. Mater., 11, 2, pp. 103-113, (2012)
- [3] Tampo H., Shibata H., Matsubara K., Et al., Two-dimensional electron gas in Zn polar heterostructures grown by radical source molecular beam epitaxy, Appl. Phys. Lett., 89, 13, (2006)
- [4] Tsukazaki A., Ohtomo A., Kita T., Et al., Quantum hall effect in polar oxide heterostructures, Science, 315, 5817, pp. 1388-1391, (2007)
- [5] Tsukazaki A., Yuji H., Akasaka S., Et al., High electron mobility exceeding 10<sup>4</sup> cm<sup>2</sup>·V<sup>-1</sup>·s<sup>-1</sup> in MgZnO/ZnO single heterostructures grown by molecular-beam epitaxy, Appl. Phys. Express, 1, 5, (2008)
- [6] Tsukazaki A., Akasaka S., Nakahara K., Et al., Observation of the fractional quantum Hall effect in an oxide, Nat. Mater., 9, 11, pp. 889-893, (2010)
- [7] Chen H., Gu S.L., Liu J.G., Et al., Two-dimensional electron gas related emissions in ZnMgO/ZnO heterostructures, Appl. Phys. Lett., 99, 21, (2011)
- [8] Ye J.D., Lim S.T., Bosman M., Et al., Spin-polarized wide electron slabs in functionally graded polar oxide heterostructures, Sci. Rep., 2, 533, (2012)
- [9] Monroy E., Omnes F., Calle F., Wide-bandgap semiconductor ultraviolet photodetectors, Semicond. Sci. Technol., 18, 14, pp. R33-R51, (2003)
- [10] Shen D.Z., Mei Z.X., Liang H.L., Et al., ZnO-based matierial, heterojunction and photoelctronic device, Chin. J. Lumin., 35, 1, pp. 1-60, (2014)