Correlation between micropipes on SiC substrate and dc characteristics of AlGaN/GaN high-electron mobility transistors

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作者：
Bang, Hyungjin [1 ,3 ]
Mitani, Takeshi [1 ,4 ]
Nakashima, Shinichi [1 ]
Sazawa, Hiroyuki [2 ]
Hirata, Koji [2 ]
Kosaki, Masayoshi [2 ]
Okumura, Hajime [1 ]
机构：
[1] Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Central 2, Umezono 1-1-1, Tsukuba, Ibaraki 305-8568, Japan
[2] R and D Association for Future Electron Devices, Hatsumei-kaikan Building, 2-9-14 Toranomon, Minato-ku, Tokyo 105-0001, Japan
[3] LG Philips LCD, Jinpyung-dong, Gumi-si, Gyungsangbuk-do 730-726, Korea, Republic of
[4] Toray Research Center Ltd., Sonoyama 3-3-7, Otsu, Shiga 520-8567, Japan
来源：
Journal of Applied Physics | 2006年 / 100卷 / 11期
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