Effect of graphene on absorption spectrum of Si/SiO2 multilayer

In recent decades, photonic crystals have emerged as a key technology in several fields, including light management, photovoltaics, detection, and lasing. This success can be attributed to the ability to regulate electromagnetic waves, which can be achieved by, through a variety of techniques, disruption the periodicity of crystals. In this study, the introduction of graphene as a material defect in a one-dimensional photonic crystal consisting of six Si/SiO2 patterns is subjected to investigation. The calculations are performed using the transfer matrix method, with the experimental data serving as the input, following a protocol that involves exploring the variation of the absorption spectra as a function of the parameters of the material system and the incident electromagnetic wave. The findings illustrate that the absorption peak exhibits a pronounced dependency on the positioning of the material defect, the graphene layer thickness, and the incident angle. This paves the way for a more detailed inquiry into its potential utility in the domain of detection.