A carrier-transit-delay-based nonquasi-static MOSFET model for circuit simulation and its application to harmonic distortion analysis

被引：0

作者：

IEEE ^{[1
]}

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不详 ^{[3
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不详 ^{[4
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机构：

[1] Graduate School of Advanced Sciences of Matter, Hiroshima University

[2] Sanyo Electric Company, Ltd.

[3] Semiconductor Technology Academic Research Center (STARC)

[4] TCAD International Inc., Tokyo

[5] Research Center for Nanodevices and Systems, Hiroshima University

来源：

IEEE Trans. Electron Devices | 2006年 / 9卷 / 2025-2033期

关键词：

Harmonic distortion (HD); Hiroshima University STARC IGFET model (HiSIM); Nonquasi-static (NQS) effect; Surface-potential-based MOSFET model;

D O I：

10.1109/TED.2006.880827

中图分类号：

学科分类号：

摘要：

In this paper, a compact model of nonquasi-static (NQS) carrier-transport effects in MOSFETs is reported, which takes into account the carrier-response delay to form the channel. The NQS model, as implemented in the surface-potential-based MOSFET Hiroshima University STARC IGFET model, is verified to predict the correct transient terminal currents and to achieve a stable circuit simulation. Simulation results show that the NQS model can even reduce the circuit simulation time in some cases due to the elimination of unphysical overshoot peaks normally calculated by a QS-model. An average additional computational cost of only 3% is demonstrated for common test circuits. Furthermore, harmonic distortion characteristics are investigated using the developed NQS model. While the distortion characteristics at low drain bias and low switching frequency are determined mainly by carrier mobility, distortion characteristics at high frequency are found to be strongly influenced by channel charging/discharging. © 2006 IEEE.

引用

页码：2025 / 2033

页数：8