A carrier-transit-delay-based nonquasi-static MOSFET model for circuit simulation and its application to harmonic distortion analysis

被引：0
|
作者：
IEEE [1 ]
不详 [2 ]
不详 [3 ]
不详 [4 ]
不详 [5 ]
不详 [6 ]
机构：
来源：
IEEE Trans. Electron Devices | 2006年 / 9卷 / 2025-2033期
关键词：
MOSFET devices;
D O I：
10.1109/TED.2006.880827
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 24 条
  • [1] A carrier-transit-delay-based nonquasi-static MOSFET model for circuit simulation and its application to harmonic distortion analysis
    Navarro, Dondee
    Takeda, Youichi
    Miyake, Masataka
    Nakayama, Noriaki
    Machida, Ken
    Ezaki, Tatsuya
    Mattausch, Hans Juergen
    Miura-Mattausch, Mitiko
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (09) : 2025 - 2034
  • [2] AN EFFICIENT NONQUASI-STATIC DIODE MODEL FOR CIRCUIT SIMULATION
    YANG, AT
    LIU, Y
    YAO, JT
    IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1994, 13 (02) : 231 - 239
  • [3] A compact nonquasi-static MOSFET model based on the equivalent nonlinear transmission line
    Pesic, TV
    Jankovic, ND
    IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2005, 24 (10) : 1550 - 1561
  • [4] Continuity equation based nonquasi-static charge model for independent double gate MOSFET
    Neha Sharan
    Santanu Mahapatra
    Journal of Computational Electronics, 2014, 13 : 353 - 359
  • [5] Implementation of Delay-Time-Based Nonquasi-Static Bipolar Transistor Models in Circuit Simulators
    Huszka, Zoltan
    Chakravorty, Anjan
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (08) : 3004 - 3006
  • [6] Continuity equation based nonquasi-static charge model for independent double gate MOSFET
    Sharan, Neha
    Mahapatra, Santanu
    JOURNAL OF COMPUTATIONAL ELECTRONICS, 2014, 13 (02) : 353 - 359
  • [7] Accurate RTA-Based Nonquasi-Static MOSFET Model for RF and Mixed-Signal Simulations
    Zhu, Zeqin
    Gildenblat, Gennady
    McAndrew, Colin C.
    Lim, Ik-Sung
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (05) : 1236 - 1244
  • [8] A PSP-based small-signal MOSFET model for both quasi-static and nonquasi-static operations
    Aarts, Annemarie C. T.
    Smit, Geert D. J.
    Scholten, Andries J.
    Klaassen, Dirk B. M.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (06) : 1424 - 1432
  • [9] Non-quasi-static model for MOSFET based on carrier-transit delay
    Nakayama, N
    Navarro, D
    Tanaka, M
    Ueno, H
    Miura-Mattausch, M
    Mattausch, HJ
    Ohguro, T
    Kumashiro, S
    Taguchi, A
    Kage, T
    Miyamoto, S
    ELECTRONICS LETTERS, 2004, 40 (04) : 276 - 278
  • [10] A physically-derived large-signal nonquasi-static MOSFET model for computer aided device and circuit simulation part-I MOSFETs and CMOS inverters
    Payton, MW
    Ho, FD
    2005 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), VOLS 1-6, CONFERENCE PROCEEDINGS, 2005, : 4154 - 4158
123