Zinc oxide thick film growth on n-type gallium nitride by photoassisted electrodeposition

被引：0
作者：
机构：
[1] Systems Eng., Wakayama Univ., Sakaedani, Wakayama
来源：
| 1600年 / Society of Materials Science Japan卷 / 62期
关键词：
Electrochemical deposition; Electrodeposition; Thick film growth; Zinc oxide;
D O I：
10.2472/jsms.62.668
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学科分类号：
摘要：
Zinc oxide (ZnO) thick film growth on n-type gallium nitride (n-GaN) using an electrodeposition was investigated. We supplied electrons to the surface by light excitation using a Xe lamp for a long continuous electrochemical deposition. By using this technique, stable electrochemical reactions for 20h and 120h were realized. The sample grown for 20h had a thickness of 26μm, an averaged optical transmission of 85% in the visible-light region, and no obvious grain boundary from its cross-sectional SEM image. On the other hand, the sample grown for 120h had a thickness of 140μm, an averaged optical transmission of 25%, and many grain boundaries. Optimization of growth conditions for the thickness of above 30∼40μm is necessary. © 2013 The Society of Materials Science, Japan.
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页码：668 / 671
页数：3
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