Correlation between deep level traps and reverse recovery of GaAs p-i-n diodes before and after neutron irradiation

被引：0

作者：

Sobolev, M.M. ^{[1
]}

Soldatenkov, F.Y. ^{[1
]}

Kozlov, V.A. ^{[1
]}

机构：

[1] Ioffe Institute, Polytekhnicheskaya 26, St. Petersburg,194021, Russia

来源：

Japanese Journal of Applied Physics | 2023年 / 62卷 / 10期

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摘要：

Carrier lifetime - Deep level transient spectroscopy - Defects - Gallium arsenide - III-V semiconductors - Neutron irradiation - Neutrons - Recovery - Semiconducting gallium

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