Anisotropic magnetoresistance in colossal magnetoresistive La1-x Srx MnO3 thin films

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作者：
Yau, Jeng-Bang [1 ]
Hong, X. [1 ]
Posadas, A. [1 ]
Ahn, C.H. [1 ]
Gao, W. [2 ]
Altman, E. [2 ]
Bason, Y. [3 ]
Klein, L. [3 ]
Sidorov, M. [4 ]
Krivokapic, Z. [4 ]
机构：
[1] Department of Applied Physics, Yale University, New Haven, CT 06520, United States
[2] Department of Chemical Engineering, Yale University, New Haven, CT 06520, United States
[3] Department of Physics, Bar Ilan University, Ramat Gan 52900, Israel
[4] Advanced Micro Devices, P.O. Box 3453, Sunnyvale, CA 94088, United States
来源：
Journal of Applied Physics | 2007年 / 102卷 / 10期
关键词：
We report on magnetic field and temperature-dependent measurements of the anisotropic magnetoresistance (AMR) in epitaxial La1-x Srx MnO3 (LSMO) thin films. While in 3d ferromagnetic alloys increasing the magnetization; either by reducing the temperature or increasing the magnetic field; increases the AMR; we find that in LSMO films the AMR dependence on magnetization displays nonmonotonic behavior which becomes particularly pronounced in lightly doped compounds. We believe that this behavior is related to the inhomogeneity exhibited by these materials. © 2007 American Institute of Physics;
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