Magnetic anisotropy in vertically aligned diluted magnetic Mn:Ge semiconductor nanowires

被引：0

作者：

Kim, Ungkil ^{[1
]}

Park, Tae-Eon ^{[1
]}

Kim, Ilsoo ^{[1
]}

Seong, Han-Kyu ^{[2
]}

Kim, Myeong-Ha ^{[1
]}

Chang, Joonyeon ^{[3
]}

Park, Jae-Gwan ^{[4
]}

Choi, Heon-Jin ^{[1
]}

机构：

[1] Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Korea, Republic of

[2] R and D Center, Samsung LED, 314 Maetan 3-dong, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-743, Korea, Republic of

[3] Center for Spintronics Research, Korea Institute of Science and Technology, Seoul 136-791, Korea, Republic of

[4] Nano-Science Research Division, Korea Institute of Science and Technology, Seoul 136-791, Korea, Republic of

来源：

Journal of Applied Physics | 2009年 / 106卷 / 12期

关键词：

27;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Journal article (JA)

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