Electronic structure and thermoelectric properties of clathrate compounds Ba8AlxGe46-x

被引:0
|
作者
Uemura, Takashi [1 ]
Akai, Koji [2 ]
Koga, Kenji [3 ]
Tanaka, Terumitsu [1 ]
Kurisu, Hiroki [1 ]
Yamamoto, Setsuo [1 ]
Kishimoto, Kengo [1 ]
Koyanagi, Tsuyoshi [1 ]
Matsuura, Mitsuru [4 ]
机构
[1] Graduate School of Science and Engineering, Yamaguchi University, Tokiwadai, 2-16-1, Ube 755-8611, Japan
[2] Media and Information Technology Center, Yamaguchi University, Tokiwadai, 2-16-1, Ube 755-8611, Japan
[3] Department of Materials Science and Electronics, Graduate School of Science and Engineering, Tokyo University of Science, Yamaguchi, Sanyo Onoda 756-0884, Japan
[4] Yamaguchi Study Center, Open University of Japan, Sanyo Onoda 756-0884, Japan
来源
Journal of Applied Physics | 2008年 / 104卷 / 01期
关键词
Electronic structure;
D O I
暂无
中图分类号
学科分类号
摘要
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [21] Effect of Europium Substitution on Thermoelectric Properties of Noble-Metal Silicon Clathrates with Ba8-xEuxCuySi46-y Nominal Compositions
    Anno, H.
    Okita, K.
    Koga, K.
    Harima, S.
    Nakabayashi, T.
    Hokazono, M.
    Akai, K.
    MATERIALS TRANSACTIONS, 2012, 53 (07) : 1220 - 1225
  • [22] First-Principles Study of the Electronic Structure and Bonding Properties of X8C46 and X8B6C40 (X: Li, Na, Mg, Ca) Carbon Clathrates
    Andrzej KoleŻyński
    Wojciech Szczypka
    Journal of Electronic Materials, 2016, 45 : 1336 - 1345
  • [23] First-Principles Study of the Electronic Structure and Bonding Properties of X8C46 and X8B6C40 (X: Li, Na, Mg, Ca) Carbon Clathrates
    Kolezynski, Andrzej
    Szczypka, Wojciech
    JOURNAL OF ELECTRONIC MATERIALS, 2016, 45 (03) : 1336 - 1345
  • [24] Electronic structure of ARuO3 (A = Ca, Sr and Ba) compounds
    Rao, MVR
    Sathe, VG
    Sornadurai, D
    Panigrahi, B
    Shripathi, T
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2001, 62 (04) : 797 - 806
  • [25] Theoretical study of structural, electronic, phonon and thermoelectric properties of KScX (X=Sn and Pb) and KYX (X=Si and Ge) half-Heusler compounds with 8 valence electrons count
    Shrivastava, Deepika
    Sanyal, Sankar P.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 784 : 319 - 329
  • [26] Magnetic properties of Mn-doped Ge46 and Ba8Ge46 clathrates
    Ganguli, Nirmal
    Shanavas, K. V.
    Dasgupta, Indra
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2012, 24 (50)
  • [27] Electronic structure and thermoelectric properties of Ta-based half-Heusler compounds with 18 valence electrons
    Hoat, D. M.
    COMPUTATIONAL MATERIALS SCIENCE, 2019, 159 : 470 - 477
  • [28] Relation between Electronic Structure and Thermoelectric Properties of Heusler-Type Ru2VAl Compounds
    Miyazaki, Hidetoshi
    Kimura, Shin-ichi
    Onishi, Kensuke
    Hihara, Takehiko
    Yoshimura, Masato
    Ishii, Hirofumi
    Mikami, Masashi
    Nishino, Yoichi
    CRYSTALS, 2022, 12 (10)
  • [29] Thermoelectric properties and electronic structure of Al-doped ZnO
    Qu, Xiurong
    Wang, Wen
    Lv, Shuchen
    Jia, Dechang
    SOLID STATE COMMUNICATIONS, 2011, 151 (04) : 332 - 336
  • [30] Effects of trigonal deformation on electronic structure and thermoelectric properties of bismuth
    Wu, C. Y.
    Han, J. C.
    Sun, L.
    Gong, H. R.
    Liang, C. P.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2018, 30 (28)