Semipolar (101¯1¯) InGaN/GaN laser diodes on bulk GaN substrates

被引:0
|
作者
Tyagi, Anurag [1 ]
Zhong, Hong [1 ]
Chung, Roy B. [1 ]
Feezell, Daniel F. [1 ]
Saito, Makoto [1 ]
Fujito, Kenji [2 ]
Speck, James S. [1 ]
Denbaars, Steven P. [1 ]
Nakamura, Shuji [1 ]
机构
[1] Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, United States
[2] Optoelectronics Laboratory, Mitsubishi Chemical Corporation, 1000 Higashi-Mamiana, Ushiku, Ibaraki 300-1295, Japan
来源
Japanese Journal of Applied Physics, Part 2: Letters | 2007年 / 46卷 / 17-19期
关键词
22;
D O I
暂无
中图分类号
学科分类号
摘要
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [41] Demonstration of True Green ITO Clad Semipolar (20(2)over-bar1) InGaN/GaN Laser Diodes
    Hardy, Matthew T.
    Holder, Casey O.
    Nakamura, Shuji
    Speck, James S.
    Cohen, Daniel A.
    DenBaars, Steven P.
    2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2013,
  • [42] Role of dislocation in InGaN/GaN quantum wells grown on bulk GaN and sapphire substrates
    Sugahara, Tomoya
    Sakai, Shiro
    IEICE Transactions on Electronics, 2000, E83-C (04) : 598 - 604
  • [43] Role of dislocation in InGaN/GaN quantum wells grown on bulk GaN and sapphire substrates
    Sugahara, T
    Sakai, S
    IEICE TRANSACTIONS ON ELECTRONICS, 2000, E83C (04): : 598 - 604
  • [44] INGAN/GAN based semipolar green converters
    Wang, J.
    Zhang, D.
    Leute, R. A. R.
    Meisch, T.
    Heinz, D.
    Tischer, I.
    Hocker, M.
    Thonke, K.
    Scholz, F.
    JOURNAL OF CRYSTAL GROWTH, 2013, 370 : 120 - 123
  • [45] Catastrophic Degradation of InGaN/GaN Blue Laser Diodes
    Wen, Pengyan
    Zhang, Shuming
    Liu, Jianping
    Li, Deyao
    Zhang, Liqun
    Zhou, Kun
    Su, Xujun
    Tian, Aiqin
    Zhang, Feng
    Yang, Hui
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2016, 16 (04) : 638 - 641
  • [46] Advances in semipolar InGaN laser diodes
    McLaurin, Mel
    Raring, James
    Poblenz, Christiane
    Rudy, Paul
    Aigeldinger, Georg
    Goutain, Eric
    Huang, Hua
    NOVEL IN-PLANE SEMICONDUCTOR LASERS XVI, 2017, 10123
  • [47] Rapid degradation of InGaN/GaN green laser diodes
    Xiu, Huixin
    Xu, Peng
    Wen, Pengyan
    Zhang, Yang
    Yang, Junhe
    SUPERLATTICES AND MICROSTRUCTURES, 2020, 142
  • [48] Laterally coupled InGaN/GaN DFB laser diodes
    Schweizer, H
    Gräbeldinger, H
    Dumitru, V
    Jetter, M
    Bader, S
    Brüderl, G
    Weimar, A
    Lell, A
    Härle, V
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2002, 192 (02): : 301 - 307
  • [49] Development of efficient semipolar InGaN long wavelength light-emitting diodes and blue laser diodes grown on a high quality semipolar GaN/sapphire template
    Li, Hongjian
    Zhang, Haojun
    Li, Panpan
    Wong, Matthew S.
    Chow, Yi Chao
    Pinna, Sergio
    Klamkin, Jonathan
    DeMierry, Philippe
    Speck, James S.
    Nakamura, Shuji
    DenBaars, Steven P.
    JOURNAL OF PHYSICS-PHOTONICS, 2020, 2 (03):
  • [50] High-power true green laser diodes on semipolar {20-21} GaN substrates
    Saga, N. (saga-nobuhiro@sei.co.jp), 1600, Institute of Electrical Engineers of Japan (133):