Semipolar (101¯1¯) InGaN/GaN laser diodes on bulk GaN substrates

被引：0

作者：

Tyagi, Anurag ^{[1
]}

Zhong, Hong ^{[1
]}

Chung, Roy B. ^{[1
]}

Feezell, Daniel F. ^{[1
]}

Saito, Makoto ^{[1
]}

Fujito, Kenji ^{[2
]}

Speck, James S. ^{[1
]}

Denbaars, Steven P. ^{[1
]}

Nakamura, Shuji ^{[1
]}

机构：

[1] Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, United States

[2] Optoelectronics Laboratory, Mitsubishi Chemical Corporation, 1000 Higashi-Mamiana, Ushiku, Ibaraki 300-1295, Japan

来源：

Japanese Journal of Applied Physics, Part 2: Letters | 2007年 / 46卷 / 17-19期

关键词：

22;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Journal article (JA)

引用

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