共 50 条
- [22] InGaN/GaN/AlGaN-based laser diodes grown an GaN substrates with a fundamental transverse made JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1998, 37 (9AB): : L1020 - L1022
- [23] InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates with a fundamental transverse mode Japanese Journal of Applied Physics, Part 2: Letters, 1998, 37 (9 A-B):
- [24] InGaN/GaN/AlGaN-based laser diodes grown on free-standing GaN substrates MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 59 (1-3): : 370 - 375
- [26] Facet formation for laser diodes on nonpolar and semipolar GaN PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2010, 207 (06): : 1361 - 1364
- [27] Development of Bulk GaN Crystals and Nonpolar/Semipolar Substrates by HVPE MRS Bulletin, 2009, 34 : 313 - 317
- [29] Comparison of InGaN/GaN light emitting diodes grown on m-plane and a-plane bulk GaN substrates PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2008, 2 (02): : 89 - 91
- [30] Distributed feedback InGaN/GaN laser diodes GALLIUM NITRIDE MATERIALS AND DEVICES XIII, 2018, 10532