Semipolar (101¯1¯) InGaN/GaN laser diodes on bulk GaN substrates

被引:0
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作者
Tyagi, Anurag [1 ]
Zhong, Hong [1 ]
Chung, Roy B. [1 ]
Feezell, Daniel F. [1 ]
Saito, Makoto [1 ]
Fujito, Kenji [2 ]
Speck, James S. [1 ]
Denbaars, Steven P. [1 ]
Nakamura, Shuji [1 ]
机构
[1] Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106, United States
[2] Optoelectronics Laboratory, Mitsubishi Chemical Corporation, 1000 Higashi-Mamiana, Ushiku, Ibaraki 300-1295, Japan
来源
Japanese Journal of Applied Physics, Part 2: Letters | 2007年 / 46卷 / 17-19期
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