Polarity control of ZnO on N-terminated GaN(0001¯) surfaces

被引：0
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作者：
Fujiwara, Katsutoshi [1 ,2 ]
Ishii, Akira [1 ]
Ebisuzaki, Toshikazu [3 ]
Abe, Tomoki [2 ]
Ando, Koshi [2 ]
机构：
[1] Department of Applied Mathematics and Physics, Tottori University, Koyama, Tottori 680-8552, Japan
[2] Department of Electrical and Electronic Engineering, Tottori University, Koyama, Tottori 680-8552, Japan
[3] Computational Astrophysics Laboratory, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2006年 / 45卷 / 11期
关键词：
We investigated the dynamics of zinc and oxygen adatoms deposited as atomic zinc and atomic oxygen on an N-polarity GaN(0001¯) surface; and the stability of 1 ML ZnO on an N-polarity GaN(0001¯) interfacial structure by first-principles calculation. We found that the adatom dynamics on an N-terminated GaN(0001¯) surface shows Zn polarity. However; we found in our calculated results that the most stable structure for 1 ML ZnO on an N-polarity GaN(0001¯) interface has O polarity. We found that the key to change the polarity of ZnO crystals grown on the N-terminated GaN(0001¯) surface is Zn-O interaction. We suggested that the optimal initial growth conditions for the growth of a Zn-polarity ZnO crystal on the N-terminated GaN(0001¯) surface are suitable low temperature and stoichiometric growth conditions that weaken the effect of Zn-O interaction. © 2006 The Japan Society of Applied Physics;
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页码：8578 / 8580
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