The Si3N4/TiN Interface: 4. Si3N4/TiN(001) Grown with a -250 V Substrate Bias and Analyzed In situ using Angle-resolved X-ray Photoelectron Spectroscopy

被引：0
|
作者：
Haasch, Richard T. [1 ]
Patscheider, Jörg [1 ,2 ]
Hellgren, Niklas [1 ,3 ]
Petrov, Ivan [1 ]
Greene, J.E. [1 ]
机构：
[1] University of Illinois, Department of Materials Science, Frederick Seitz Materials Research Laboratory, Urbana, IL 61801
[2] EMPA, Laboratory for Nanoscale Materials Science, CH-8600 Dübendorf
[3] Messiah College, Department of Mathematical Sciences, Grantham, PA 17027, P.O. Box 3041, One College Avenue
来源：
Surface Science Spectra | 2012年 / 19卷 / 01期
关键词：
Hard coating; Magnetron sputtering; Silicon nitride; Titanium nitride; Transition metal nitride;
D O I：
10.1116/11.20121004
中图分类号：
学科分类号：
摘要：
Angle-resolved x-ray photoelectron spectroscopy (AR-XPS) was used to analyze Si3N4/TiN(001) bilayers grown by ultrahigh vacuum reactive magnetron sputter deposition onto MgO(001), with a substrate potential of -250 V, in mixed 1:1 Ar/N2 discharges maintained at a total pressure of 0.5 Pa (3.75 × 10-3 Torr). The TiN(001) films were grown at 600 °C and the 4-ML-thick Si3N4 overlayers at room temperature. AR-XPS spectra were obtained using incident monochromatic Al Kα X-radiation at 0.83401 nm. Si3N4/TiN(001) Ti 2p spectra reveal enhanced unscreened final-state satellite peaks, compared to Ti 2p spectra obtained from uncapped TiN(001), due to decreased electronic screening induced by Si3N4/TiN(001) bilayer interfacial polarization. © 2012 American Vacuum Society.
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页码：62 / 71
页数：9
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