Mitigating methodology of hardware non-ideal characteristics for non-volatile memory based neural networks

被引:0
作者
Lixia HAN [1 ,2 ]
Peng HUANG [1 ,2 ]
Yijiao WANG [3 ]
Zheng ZHOU [1 ,2 ]
Haozhang YANG [1 ,2 ]
Yiyang CHEN [1 ,2 ]
Xiaoyan LIU [1 ,2 ]
Jinfeng KANG [1 ,2 ]
机构
[1] School of Integrated Circuits,Peking University
[2] Beijing Advanced Innovation Center for Integrated Circuits
[3] School of Integrated Circuit Science and Engineering,Beihang
关键词
D O I
暂无
中图分类号
TP333 [存贮器]; TP183 [人工神经网络与计算];
学科分类号
摘要
Non-volatile memory-based computing-in-memory(nvCIM) paradigm has been extensively studied to boost the energy efficiency of neural network accelerators in edge applications. However, the degradation of inference accuracy induced by the non-ideal characteristics across circuits, arrays, and devices is becoming a crucial issue. In this work, we establish a hardware characteristic behavior model to analyze the impact of nvCIM non-ideal characteristics on neural network accuracy.Then we propose a hardware aware training and weight mapping correction methods to mitigate inference accuracy degradation.Through simulation verification, about 95% inference accuracy degradation is recovered by adopting the proposed mitigation method for various non-ideal characteristics and various neural network models. The feasibility of the proposed method is further proved in an experimental example with a flash-based LeNet recognition system.
引用
收藏
页码:307 / 321
页数:15
相关论文
共 50 条
  • [21] Nanocrystals for non-volatile memory
    不详
    ELECTRONICS WORLD, 2000, 106 (1776): : 914 - 914
  • [22] NON-VOLATILE SEMICONDUCTOR MEMORY
    KLEIN, R
    TCHON, WE
    MICROPROCESSING AND MICROPROGRAMMING, 1982, 10 (2-3): : 129 - 138
  • [23] Memory characteristics of anthracene-based polyimides in non-volatile resistive memory devices
    Lee, Seung-Hyun
    Park, Sechang
    Choi, Ju-Young
    Choi, Yun-Je
    Ji, Hyung Woo
    Joung, Hyeyoung
    Kim, Dam-Bi
    Yoon, Kang-Hoon
    Ji, Gyumin
    Choi, Daeho
    Lee, Jaekang
    Paeng, Ki-Jung
    Yang, Jaesung
    Cho, Soohaeng
    Chung, Chan-Moon
    MATERIALS ADVANCES, 2023, 4 (22): : 5706 - 5715
  • [24] Impact of Non-Ideal Characteristics of Resistive Synaptic Devices on Implementing Convolutional Neural Networks
    Sun, Xiaoyu
    Yu, Shimeng
    IEEE JOURNAL ON EMERGING AND SELECTED TOPICS IN CIRCUITS AND SYSTEMS, 2019, 9 (03) : 570 - 579
  • [25] The Research of Spark Memory Optimization Based on Non-Volatile Memory
    He, Qinlu
    Dong, Huiguo
    Bian, Genqing
    Zhang, Fan
    Zhang, Weiqi
    Liu, Kexin
    Li, Zhen
    JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2022, 17 (01) : 30 - 39
  • [26] Temperature-dependent characteristics of non-volatile transistor memory based on a polypeptide
    Liang, Lijuan
    Fukushima, Tomoo
    Nakamura, Kazuki
    Uemura, Sei
    Kamata, Toshihide
    Kobayashi, Norihisa
    JOURNAL OF MATERIALS CHEMISTRY C, 2014, 2 (05) : 879 - 883
  • [27] Non-volatile memory based in-memory computing technology
    Zhou Zheng
    Huang Peng
    Kang Jin-Feng
    ACTA PHYSICA SINICA, 2022, 71 (14)
  • [28] Volatile and Non-Volatile Single Electron Memory
    Touati, A.
    Kalboussi, A.
    JOURNAL OF NANO- AND ELECTRONIC PHYSICS, 2013, 5 (03)
  • [29] A Materials Screening Methodology for Scaled Non-Volatile Memory in the AI Era
    Lanzillo, Nicholas A.
    Robison, Robert R.
    2019 IEEE ALBANY NANOTECHNOLOGY SYMPOSIUM (ANS), 2019,
  • [30] Mitigating Effects of Non-ideal Synaptic Device Characteristics for On-chip Learning
    Chen, Pai-Yu
    Lin, Binbin
    Wang, I-Ting
    Hou, Tuo-Hung
    Ye, Jieping
    Vrudhula, Sarma
    Seo, Jae-sun
    Cao, Yu
    Yu, Shimeng
    2015 IEEE/ACM INTERNATIONAL CONFERENCE ON COMPUTER-AIDED DESIGN (ICCAD), 2015, : 194 - 199