Ultra-Compact, Fully Packaged Broadband Thin-Film Lithium Niobate Modulator for Microwave Photonics

被引：0
|
作者：
Li, Jinye [1 ,2 ]
Li, Dechen [1 ,2 ]
Wang, Peng [1 ,2 ]
Tao, Jinming [1 ,2 ]
Li, Run [1 ,2 ]
Jia, Qianqian [1 ,2 ]
Liu, Jianguo [1 ,2 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 2024年 / 60卷 / 06期
基金：
中国国家自然科学基金;
关键词：
Modulation; Optical waveguides; Optical fibers; Optical modulation; Electro-optical waveguides; Electro-optic modulators; Electrodes; Microwave photonics; lithium niobate; packaging; electrooptic modulators; SILICON; BANDWIDTH; DESIGN;
D O I：
10.1109/JQE.2024.3462950
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Broadband, compact electro-optic modulator is one of the key components in optical communication networks and microwave photonic systems. Here, this paper reports a thin-film lithium niobate electro-optic modulator with a 3 dB electro-optic bandwidth greater than 50 GHz after encapsulation, and discusses the electro-optic response and thermo-optic phase- shifting performance of the device. The modulator chip has a 3 dB electro-optic bandwidth greater than 67 GHz, and the fully encapsulated device has a small size (31 mm x 10 mm x 5.3 mm) while having a high electro-optic bandwidth of up to 51 GHz and an excellent half-wave voltage length product as low as 2.5 V<middle dot> cm. The DC bias is thermally shifted with a 2.3V half-wave voltage for reliable and stable bias characteristics.
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页数：9
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